Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet* *Project supported by the National Natural Science Foundation of China (Grant No. 11404322), the Natural Science Foundation of the Jiangsu Higher Education Institutions of China (Grant No. 18KJD140005), and Zhengzhong Zhang is supported by the China Postdoctoral Science Foundation (Grant No. 2013M541635) and the Postdoctoral

Abstract

A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a single-molecule magnet sandwiched between the nonmagnetic and ferromagnetic (FM) leads. By applying different voltage pulses V write across the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be “read out” either by the magneto-resistance or by the spin current with another series of small voltage pulses V probe. It is shown that the polarization of the spin current is extremely high (up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices.