Abstract
Intrinsic Josephson junctions were fabricated by silicon (Si) ion implantation into Bi-Sr-Ca-Cu-O (BSCCO) single crystals of 2212 phase grown by the traveling solvent floating zone (TSFZ) method. Si ions with the acceleration energy of 80 keV were implanted into BSCCO. Si-implanted portion of BSCCO turned to insulator and defined junctions precisely. The project range of Si into BSCCO controls thickness of intrinsic junctions. The junction exhibited a typical current-voltage characteristic of the BSCCO intrinsic Josephson junction showing a good uniformity of the critical current and the number of branches is consistent with the depth where Si ions were implanted.
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