Abstract
A detailed study on annealing-induced below band gap absorption in GaSbBi layers, grown by liquid phase epitaxy, is presented. It is shown that, other than the already reported below band gap absorption in GaSb and GaSbBi, due to free carrier absorption and light hole to heavy hole transitions, an additional absorption band near the band edge appears after a rapid thermal anneal of the layers. The magnitude of absorption and the band spread is found to increase with that of Bi in the material. It is supposed that this additional absorption band is due to electronic transitions from the band edge to the Bi-related defect complexes in GaSbBi which are formed during annealing.
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