Bi-polysilicon passivating contact technique for crystalline silicon solar cell

Abstract

Polysilicon (poly-Si) passivating contacts overcome the direct metal–semiconductor contact drawback of traditional industrial crystalline silicon (c-Si) solar cells by inserting a layer stack of poly-Si and silicon oxide layers at the rear full-area metal/c-Si interface, which is well-known as a tunnel oxide passivating contact (TOPCon). In conventional industrial TOPCon devices, the direct contact problem affects the emitter, which deteriorates the passivation quality and suppresses the open-circuit voltage (Voc). We herein introduce an innovative bi-poly-Si technique (Bi-TOPCon) featuring rear full-area passivated poly-Si and emitter locally passivated poly-Si to improve the passivation quality of the TOPCon device. The local emitter poly-Si is introduced using metal mask alignment, and its properties are optimised toward high passivation quality and low contact resistance. The Bi-TOPCon device shows a significant improvement in Voc (Voc > 700 mV). Bi-TOPCon is a promising technology for high-efficiency, next-generation industrial TOPCon devices.