Bi modification for low-temperature processing of YMnO3 thin films

Abstract

YMnO 3 thin films have been modified by Bi for low-temperature processing. YMnO3 thin-film growth typically requires high temperatures possibly leading to undesirable interface reaction and device failure in further processing. We have proposed Bi modification into YMnO3 (YBM) thin films grown on Si (100) by pulsed-laser deposition for reduced temperature processing. The growth temperature of YBM films was significantly reduced by more than 150 °C from the typical growth temperature of YMnO3 films. Highly c-axis-oriented growth of hexagonal YBM films at low temperatures was effective above 5% Bi content modification. Surface analysis on YBM films suggests that very thin Bi oxide layer forms on the topmost growing surface of YBM films and enhances the surface mobility of adatoms, leading to enhanced crystallization and low-temperature processing. The Bi modification did not deteriorate the electrical properties of YMnO3 such as dielectric constant and leakage current. This Bi modification can be an effective method to reduce processing temperature for other oxide thin films in physical vapor deposition.