Abstract
Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.
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