Abstract
AbstractRecently, lead‐free Sn‐based perovskite light‐emitting diodes (PeLEDs) have attracted wide attention due to their near‐infrared emission and environmental friendliness. However, desired Sn2+ is easily oxidized to Sn4+ in the crystallization process, resulting in defects and intrinsically p‐doped properties in the perovskite films. The uncontrollable oxidation affects the charge injection balance and radiative recombination, leading to poor device performance. Herein, a bi‐functional conductive molecular, 2,7‐bis(diphenylphosphoryl)‐9,9′‐spirobifluorene (SPPO13) with two P═O functional groups, is used to interact with perovskite to passivate defects and suppress the oxidation of Sn2+. Moreover, the SPPO13 modification layer inserted between the perovskite emitter and the electron transport layer can regulate the carrier injection and transport, thus promoting the charge balance. As a result, the high‐performance near‐infrared CsSnI3 PeLEDs with a record external quantum efficiency (EQE) of 6.60% and ultra‐low efficiency roll‐off are achieved. The work provides a novel approach to regulate defect passivation and charge transport for efficient Sn‐based PeLEDs.
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