Abstract

Power electronics in hybrid-electric military ground vehicles require fast fault isolation, and benefit additionally from bi-directional fault isolation. To prevent system damage or failure, maximum fault current interrupt speeds in tens to hundreds of microseconds are necessary. While inherently providing bi-directional fault isolation, mechanical contactors and circuit breakers do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a scalable array of solid-state devices as a solid-state circuit breaker (SSCB) having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. Although, both silicon-carbide (SiC) JFET and SiC MOSFET devices having high breakdown voltages and low drain-to-source resistances have been developed, neither device structure alone is capable of reverse blocking at full voltage. Limitations exist for using a dual common-source structure for either device type. Small-scale SSCB experiments were conducted using 0.03 cm2 normally-on SiC VJFETs. Based on results of these tests, a normally-on VJFET device modification is made, and a proposed symmetric SiC JFET is considered for this application.

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