Bi and Al co-doped anatase titania for photosensitized degradation of Rhodamine B under visible-light irradiation

Abstract

Although TiO2 is a wide band gap semiconductor, it demonstrates photodegradation activity under visible light irradiation after dye sensitization. Compared with esterification between the surface hydroxyl group of TiO2 and the carboxylic group of dyes, electrostatic interaction between TiO2 and dye shows better photosensitized performance. In this work, Bi/Al co-doping anatase titania (Ti1-xBi2x/3Al2x/3O2 (0 ≤ x ≤ 0.3)) is designed to enhance the electrostatic interaction. The effect of Al ions is to enhance the solubility of Bi3+ into titania nanocrystals. A new band gap is generated after high concentration of Bi element doping, which not only promotes the absorption of visible light, but also improves the utilization of photogenerated carriers. Based on the results of transmission electron microscopy, light absorption, photodegradation activity and density functional theory calculations, it is found that bismuth dopant is the electron capture site. It first accumulates electrons through photocatalytic degradation reaction to enhance electrostatic adsorption between the catalyst and the positively charged dye molecules, and finally realizes high-efficiency photosensitization degradation of Rhodamine B. In addition, the sensitized titania has excellent photodegradation recyclability.