Abstract
Bi 2Sr 2Ca n−1 Cu n O y (2212 and 2223 phases) thin films have been prepared on tilted SrTiO 3(001) substrates by molecular beam epitaxy (MBE) with growth interruption technique, which is an advantageous method to enhance the surface diffusion of adatoms. Reflection high-energy electron diffraction (RHEED) observations have indicated that highly growth-controlled films can be obtained without precipitation of any impurity phases. Furthermore, RHEED intensity variations have indicated that the MBE growth may proceed by step-flow mode or two-dimensional (2D) island mode depending on the growth conditions. Atomic force microscopy (AFM) measurements have shown that the surfaces are single-step structures with step height of half a unit cell for the 2D island growth.
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