BGaN materials on GaN/sapphire substrate by MOVPE using N 2 carrier gas

Abstract

BGaN materials with good structural quality and surface morphology have been successfully grown on GaN template substrates by low pressure metal organic vapour phase epitaxy. TEB and NH3 were used as precursors of boron and nitrogen, respectively. All the growths were performed under 100% N 2 process gas. Boron concentration was estimated by HRXD measurements combined with SIMS analysis. Single-crystal layers BGaN with B content as high as 3.6% have been obtained.