Abstract
In this work we have demonstrated a waveguide integrated uni-traveling carrier photodiode on an InP-membrane-on-silicon platform with 3 dB bandwidth beyond 110 GHz. With design optimization and an improved process, devices as small as <inline-formula><tex-math notation="LaTeX">$ \text{3}\times \text{2}\;\mu \text{m}^2$</tex-math></inline-formula> are successfully realized. An electrical equivalent circuit model based on measured S-parameters revealed ultra-small series resistance and junction capacitance as low as 6.5 <inline-formula><tex-math notation="LaTeX">$\Omega$</tex-math></inline-formula> and 4.4 fF, respectively, in the diodes. The model also provided insight in the photocurrent dependent characteristics in the bandwidth and resonsivity of the devices. Finally, data transmission measurements are demonstrated, showcasing the high speed telecommunication abilities of the UTC-PD.
Highlights
I NCREASING demand for high speed data transmission [1] and emerging imaging techniques using frequencies up to the terahertz range [2] generate demand for low-cost and high efficiency millimeter wave to terahertz devices
An improved uni-traveling carrier photodiodes (UTC-PD) design at reduced footprints based on [12] and its detailed characterization are presented in this work
The waveguide integrated uni-traveling carrier photodiode is realized in the InP-membrane-on-silicon platform [15]
Summary
I NCREASING demand for high speed data transmission [1] and emerging imaging techniques using frequencies up to the terahertz range [2] generate demand for low-cost and high efficiency millimeter wave to terahertz devices. The absence of holes in the depletion region reduces the space charge effect, enabling high current operation [10] These characteristics make UTC-PDs an interesting device for high speed communications, and enable the generation of high frequency signals due to its ability to reach bandwidths >100 GHz. High bandwidth photomixers based around a UTC-PD have already demonstrated reaching frequencies up to 1 THz [11]. This work demonstrates the high speed data transmission capabilities of the new UTC-PD design by means of eye diagrams and bit error rate (BER) measurements Improvements in both design and fabrication are utilized to further increase the bandwidth of the IMOS UTC-PD while maintaining a reasonable responsivity, aiming for a high bandwidth-efficiency product for this InP based PD
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