Abstract
The parameters of betavoltaic cells based on a Ni/β-Ga2O3 Schottky barrier diode and beta-particle source containing 63Ni are evaluated. Monte Carlo simulation is used to calculate the depth-dependent generation rate of excess carriers produced by beta-radiation from 63Ni source. It is shown that the dependence can be described by the exponential function exp(−z/z0) with z0 equal to 1.3 μm. The short circuit current, open circuit voltage, and maximum power are calculated for the Schottky barrier with parameters obtained from the electron beam induced current studies of Ni Schottky barriers formed on n-type β-Ga2O3.
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