Beta Silicon Carbide Growth with Device Applications

Abstract

ABSTRACTEpitaxial thin films of cubic-SiC (100) have been grown at temperatures ranging from 1340–1400°C by using a reduced pressure chemical vapor deposition system. In this work, we will report on the doping of SiC using trimethylalumium (TMA), phosphine, and nitrogen. The electrical measurements on the SiC layers have been performed (Hall, CV, DLTS, etc.) and will be discussed in reference to SiC MESFETs and other SiC device structures.