Best candidate integrated technology for low‐noise, high‐speed, and wide bandwidth‐based transimpedance amplifiers in optical computing systems and optical fiber applications

Abstract

SummaryThis paper presents the best candidate integrated technology for achieving low‐noise, high‐speed, and wide bandwidth transimpedance amplifiers in optical computing and communication systems. Different complementary metal oxide semiconductor (CMOS) technology sizes are employed in addition to high electron mobility transistor (HEMT), bipolar CMOS (BiCMOS), and gallium arsenide technologies‐based transimpedance amplifiers to achieve high‐speed capability with low noise. These different technologies are applied on two proposed models to test the performance parameters. Maximum output signal voltage, maximum RF power spectrum, received output power, maximum Q‐factor, and minimum bit error rate are the tradeoff parameters for two proposed models at high transmission bit rates up to 400 Gb/s. It is observed that 600‐nm CMOS technology has presented the best candidate to deal with high transmission bit rates because of its superior performances in either the first proposed model or the second proposed model compared with other technologies under study. Figure of merit is applied on two proposed models and previous works to show the high‐speed performance operation of transimpedance amplifiers in our proposed models. The signal is tested before and after transimpedance amplifiers in different technologies.