Abstract

Heavily Be-doped InGaAs lattice-matched to InP is attained by conventional low-pressure metalorganic chemical vapor deposition (MOCVD) for the first time. InGaAs doped with more than 10 19 cm -3 of Be, decomposed from diethylberyllium (DEBe), can be grown in the temperature range between 500 and 600°C. Doping behavior is independent of growth temperature in this range. It is found that the Be concentration in InGaAs is proportional to the second power of the DEBe flow rate. According to thermodynamic analysis, it is speculated from this tendency that Be is incorporated through the β-elimination decomposition of a diethylberyllium dimer. It is also found that its doping efficiency is at least an order magnitude larger than that for a Zn dopant.

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