Abstract
Within the framework of a simple model, we investigated the Berry phase of epitaxial graphene (EG) formed on a semiconductor substrate. We have shown that this value is equal to [Formula: see text] near the Dirac point. This result is in complete agreement with the experimental data. We have shown that the Berry phase of epitaxial graphene may differ from [Formula: see text] far away from Dirac point. In addition, we investigated the Landau levels (LLs) in the epitaxial graphene within the framework of the semiclassical approach.
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