Abstract

We compare homogeneous and selective emitters on monocrystalline silicon solar cells with passivated surfaces and present an analysis of the saturation current densities influencing the open-circuit voltage <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> and the fill factor FF . The cells' surfaces are passivated by a thin thermal oxide. Selective emitters are fabricated by laser doping from phosphosilicate glass. On both Czochralski-grown silicon (Cz-Si) as well as float zone silicon (FZ-Si), we find higher conversion efficiencies for the cells featuring a selective emitter. An efficiency up to 20.0% is reported on FZ-Si with an area of 148.4 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . For the selective emitter cells, 8 mV higher open-circuit voltages are found compared with the baseline. A saturation current analysis reveals that these cells exhibit a lower diode saturation current density of ideality 2 ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">02</sub> ), as well as improved shielding of the minorities in the emitter from the front contact. The selective emitter cells show a minor loss in short-circuit current density <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</sub> of 0.5 % <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rel</sub> due to the presence of highly doped, illuminated areas. Front contact quality of the cells featuring a selective emitter is found to be superior compared with the cells with a homogeneously doped emitter.

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