Abstract
The effect of H2 surface pretreatment on the density of interface traps in SiO2 films grown on the Si-face of 4H-SiC has been investigated. With respect to the more conventional oxide grown in nitrous oxide gas by rapid thermal processing but without any preannealing step, we find that the interface trap and fixed oxide charge densities have been reduced by, typically, one order of magnitude. The reasons for such improvement in the properties of the SiO2/SiC interface after preoxidation hydrogen annealing are discussed.
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