Abstract
Mo3Sb7 has been known as a p-type metal with commonly poor thermoelectric properties. However, Mo3Sb7 can be a high-efficiency thermoelectric material, owing to its capability of a metal–semiconductor transition, which can be realized by adding two valence electrons through elemental substitutions. Among the Mo3Sb7-based compounds, Mo3Sb5.4Te1.6 shows the highest figure of merit, zT, but additional valence electrons are needed for further improvement of the figure of merit. Here, we try to enhance the figure of merit of Mo3Sb7 by iodine-doping and by synthesizing and characterizing Mo3Sb7Ix with x = 0, 0.50, 0.75, 1.00, 1.25, and 1.50, where antimony (valence electrons = 5) is replaced by iodine (valence electrons = 7). We confirmed that the solubility limit for iodine in Mo3Sb7Ix was 1.25 < x < 1.50, and the figure of merit was enhanced by approximately 65% in maximum in x = 1.25.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
