Abstract
Conformal transformation and the beam propagation method are employed for the simulation of deeply-etched bent and serpentine waveguides on an InP substrate with an active region consisting of double InGaAs quantum wells. The modal properties are analyzed and the bending and transition losses are extracted from the propagation results. For the serpentine waveguides, the transition losses increase significantly for waveguides with bending radii less than 12 μm, yet careful choice of the transition point at which the curvature reverses is shown to minimize the losses induced by the transition. Effects of etch depth are also considered and conclusion that it is necessary to etch through the active region for deeply-etched bent waveguides is drawn.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
