Abstract
The authors report the fabrication and I-V characteristics of ZnO nanorod metal–semiconductor–metal photodetectors on flexible polyimide substrate. From field-emission scanning electron microscopy and X-ray diffraction spectrum, ZnO nanorods had a (0002) crystal orientation and a wurtzite hexagonal structure. During the I-V and response measurement, the flexible substrates were measured with (i.e., the radius of curvatures was 0.2 cm) and without bending. From I-V results, the dark current decreased, and the UV-to-visible rejection ratio increased slightly in bending situation. The decreasing tendency of the dark current under bending condition may be attributed to the increase of the Schottky barrier height.
Highlights
Zinc oxide (ZnO), a nanostructured material that has been widely investigated, has a wide energy band gap of 3.37 eV at room temperature, high optical gain of 300/ cm which is higher than that of GaN (100/cm) [1], and large exciton binding energy of 60 meV [2] which is higher than that of ZnSe (22 meV) and GaN (25 meV)
It can be seen that the ZnO nanorod arrays selectively distributed among the interdigitated electrodes of the device
In summary, we reported the fabrication and I-V characteristics of ZnO nanorod PDs on PI substrate
Summary
Zinc oxide (ZnO), a nanostructured material that has been widely investigated, has a wide energy band gap of 3.37 eV at room temperature, high optical gain of 300/ cm which is higher than that of GaN (100/cm) [1], and large exciton binding energy of 60 meV [2] which is higher than that of ZnSe (22 meV) and GaN (25 meV). The large exciton binding energy provides high-luminescence efficiency of light emission at or above room temperature. ZnO has slightly higher saturation velocity of 3.2 × 107 cm/s [3] than GaN, InGaN, and AlGaN [4,5], but the room temperature electron Hall mobility (205 cm2/V/s/) [6] is lower than that of GaN. ZnO has lower growth temperature and material cost than III-nitride materials.
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