Abstract

Vibrations at hydrogen and deuterium covered GaAs(110) surfaces were investigated by high resolution electron energy loss spectroscopy. With semi-insulating crystals, bending modes of H and D were found at 515 and 387 cm −1 (63.9 and 48 meV), respectively. After large exposures when substrate bonds are broken scissor modes at 1000 cm −1 (124 meV) for AsH 2 and at 752 cm −1 (93.2 meV) for AsD 2 groups were observed. In the low-coverage regime two components of the GaH stretching vibration at 1830 and 1860 cm −1 (226.9 and 230.6 meV) were resolved. They may be explained by GaH dipole-dipole interactions.

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