Abstract
Semiconducting graphene nanoribbons (GNRs) are envisioned to play an important role in future electronics. This requires the GNRs to be placed on a surface where they may become strained. Theory predicts that axial strain, i.e. in-plane bending of the GNR, will cause a change in the band gap of the GNR. This may negatively affect device performance. Using the tip of a scanning tunneling microscope we controllably bent and buckled atomically well-defined narrow armchair GNR and subsequently probed the changes in the local density of states. These experiments show that the band gap of 7-ac-GNR is very robust to in-plane bending and out-of-plane buckling.
Highlights
For graphene to reach its full potential in electronic applications, it is essential to introduce a band gap [1]
In case of graphene nanoribbons (GNRs), the band gap depends on the width and termination of the ribbon
Sizeable band gaps are only obtained for armchair edge GNRs having a width on the order of 5–15 atoms[3,4,5]
Summary
For graphene to reach its full potential in electronic applications, it is essential to introduce a band gap [1]. Any further distribution of this work must maintain predicts that axial strain, i.e. in-plane bending of the GNR, will cause a change in the band gap of the attribution to the GNR.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
