Abstract

Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper we present a full theoretical analysis of electronic single-shot readout and describe critical parameters to achieve high fidelity readout. In particular, we derive a model for energy selective state readout based on a charge detector response and examine how to optimise the fidelity by choosing correct experimental parameters. Although we focus on single electron spin readout, the theory presented can be applied to other electronic readout techniques in semiconductors that use a reservoir.

Highlights

  • Quantum computing relies on the preparation, control and measurement of quantum states [1]

  • In order to achieve scalable universal quantum computation the error rate of all these processes needs to be less than ∼1 %—known as the fault-tolerant threshold for 2-dimensional surface codes [2,3,4,5]

  • The usefulness of randomised benchmarking comes from removal of state preparation and measurement errors

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Summary

INTRODUCTION

Quantum computing relies on the preparation, control and measurement of quantum states [1]. The measurement distributions are only dependent on a few experimentally accessible parameters including the noise spectrum, measurement bandwidth, temperature, magnetic field strength, tunnel rate to the reservoir, qubit energy separation, and the timing of the state conversion process These factors have not always been consistently accounted for, and the fidelity analysis using energy selective spin readout has evolved since its first demonstration by Elzerman et al in 2004 [16]. [17] employed the commonly used MonteCarlo method to fit simulated signal histograms to experimental histograms to optimise the readout threshold and take post-processing errors into account In this analysis the effect of the finite electron temperature and spin relaxation on the spin state during readout was not included. Our method removes the need to rely on Monte-Carlo simulations [17] to calculate fidelities which we show in

STATE-TO-CHARGE CONVERSION
Optimal state-to-charge visibility
Readout time limited
T1 limited
ELECTRICAL READOUT
Optimal electrical visibility
Sample rate limited
Filter limited
Initialisation fidelity
Calculation of VE assuming white Gaussian noise
An example of the optimisation of experimental parameters
Extension to sequential multi-qubit readout
SUMMARY
COMPARISON OF THE NUMERICAL APPROACH AND THE MODEL
PARAMETERS FOR A 8TH ORDER LOW PASS BESSEL FILTER
PARAMETERS USED IN THE CALCULATION OF PREVIOUS EXPERIMENTAL FIDELITIES
Full Text
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