Abstract
Belt transport CVD processing, a simple but useful technique applied widely in wafer fabrication, is evaluated in this work. An empirical relation, , where is the oxide thickness, is established. The value of is found to be 1.09 experimentally and 1.0 as analyzed theoretically. A simple deposition model is discussed. The effects of belt speed on film thickness and the effects of flow rate on characteristics are also studied in detail.
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