Abstract
AbstractPhotoreflectance (PR) spectroscopy has been applied to study the optical transitions in an AlGaN/GaN transistor heterostructure at room temperature. A strong PR feature at ∼3.37 eV has been observed besides PR features related to the band‐to‐band absorption in GaN and AlGaN layers. This feature has been attributed to an electron transition between the valence band and a donor‐like state located ∼50 meV below the conduction band. Such a transition is possible to observe in absorption‐type experiment (such as PR spectroscopy) at room temperature because the donor‐like state is ionized by the strong electric field existing in GaN layer. The existence of the electric field with a magnitude of ∼233 kV/cm has been confirmed by the observation of GaN‐related Franz‐Keldysh oscillations in the PR spectra. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
