Abstract
AbstractThe existence of energy level inside the band gap energy of GaAsN was discussed in this paper. The photoluminescence (PL) spectrum of the GaAsN epilayers grown by metal‐organic chemical vapor deposition (MOCVD) consists of two distinguished peaks separated by 0.2 eV energy difference. First peak belongs to the energy band gap transition emission, while the second peak resides at longer wavelength with intensity more than ten times stronger than that of the band‐to‐band emission. The activation energy of this second emission peak is found to be 113 meV. The peak shows a characterization of a defect in the epilayer where its PL intensity decreases when the GaAsN epilayer was exposed to rapid thermal annealing (RTA). This type of defect related emission is the first reported in as‐grown GaAsN epilayer. This defect emission peak can be overcome with optimization of V/III ratio during the MOCVD growth combined with post‐growth RTA annealing. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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