Abstract
The classification of impurities with respect to the doping effect is given by an example of amorphous CdGeAs 2. Impurities with a high chemical activity (Cu,Te) capable to produce saturated bonds with closed electron shells in the given substance refer to the first group. The characteristic feature of this group is the extremely localized impurity potential, which does not form bound electron states. That is why the introduction of impurities does not lead to the significant doping effect. Impurities having low chemical activity (Ni,Co) with respect to the original substance components belong to the second group. A low chemical activity of impurities does not provide the full saturation of valence bonds. The distinctive feature of the second group is a long-range character of the impurity potential providing sufficiently extensive radius of a bound state and the overlap value of wavefunctions.
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