Abstract

The behaviour of CIGS solar cells using a light irradiation rest is investigated. The conversion efficiency after the test increases by /spl sim/25%. This is mainly due to the increase in Isc and FF and the lowering of the series resistance. It is also shown that the performance of the diode decreases. Because the value of the diode factor increases from 1.9 to 2.4. In addition, the changes in the junction condition and generation of defects are suggested to be based on the measurement of electroluminescence and the photoabsorption current spectrum by the light below the sensitivity of the cell.

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