Behaviour of CPW and TFMS lines at high temperature for RF applications in sub-45 nm nodes

C Roda Neve,A Farcy,M Gallitre,B Blampey,P Meuris,L Arnaud,J.-P Raskin

doi:10.1016/j.mee.2009.06.021

Behaviour of CPW and TFMS lines at high temperature for RF applications in sub-45 nm nodes

C Roda Neve, A Farcy + Show 5 more

https://doi.org/10.1016/j.mee.2009.06.021

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Journal: Microelectronic Engineering	Publication Date: Jun 26, 2009
Citations: 2

Affiliation: Institut de Microélectronique, Electromagnétisme et Photonique, Université Savoie Mont Blanc, CEA Grenoble, CEA LETI, Atomic Energy and Alternative Energies Commission, Magwel (Belgium), STMicroelectronics (France)

#Thin Film Microstrip Lines #Inter-metal Dielectric Layers + Show 8 more

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Abstract

Coplanar waveguide (CPW) and thin film microstrip (TFMS) lines integrating porous ultra low- k as inter-metal dielectric layers ( k = 2.5) and copper as metal, are for the first time experimentally measured up to 110 GHz and under different temperature conditions, up to 200 °C. The extracted attenuation and propagation coefficients of those transmission lines are compared to simulations performed with MAGWEL software, a frequency domain 3-D Maxwell solver. Based on the characterization results some guidelines related to interconnect design are presented for future applications.

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