Abstract
Silicidation of thin films of Ta/Ti bilayers on silicon substrates, in the temperature range 750–1000 °C, using rapid electron-beam heating is described. The redistribution of adsorbed oxygen in the metal films and its effect on the formation of the suicide is examined. It was found that the silicidation of the bimetallic films proceeded sequentially. First titanium and then tantalum layers were converted into their respective suicides. During the growth of titanium disilicide, adsorbed oxygen moved to the interface between the unreacted tantalum film and the grown titanium disilicide, where it formed a thin layer of silicon dioxide. The silicon dioxide barrier inhibited silicon diffusion and the tantalum layer only converted to suicide at temperatures higher than 750 °C which were maintained for a few seconds.
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