Abstract
The behaviors of surfactant atoms for thin film growth on the Si(001) surface formed by molecular beam epitaxy were observed. At first, heterointerfaces on Si/Ge and Ge/Si without surfactant effect were investigated and are discussed on the basis of thermodynamics of surfaces and surface diffusion. The mechanism of island formation as a later stage of Stranski-Krastanov growth mode is also discussed. Surfactant effects of Bi atoms on the heteroepitaxial structures were investigated experimentally. Behavior of Sb as a surfactant was also observed and compared with the results of Bi. Mechanisms for improvements in the abruptness at heterointerfaces of Si/Ge/Si as well as suppression of island formation are discussed. The formation of atomic-scale wires of Bi was observed. The structure of Bi wires at high temperatures is described.
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