Abstract
We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source molecular beam epitaxy. P type layers present a high degree of compensation on the order of 1018 cm−3, and for Be densities below 9.5×1017 cm−3, they are found to be n type. Enhanced incorporation of oxygen during Be doping is observed by secondary ion mass spectroscopy. Be in forms of interstitial donors or donor-like Be-O complexes for cell temperatures below 800°C is proposed to account for such anomalous compensation behaviors. A constant photoluminescence energy of 0.98 eV without any Moss-Burstein shift for Be doping levels up to 1018 cm−3 along with increased emission intensity due to passivation effect of Be is also observed. An increasing number of minority carriers tend to relax via Be defect state-related Shockley-Read-Hall recombination with the increase of Be doping density.
Highlights
Compensation doping in compound semiconductors and the associated carrier transport and recombination dynamics are of great importance for device designs and analyses, especially when p type light doping is of concern
We report results from structural, carrier transport and detailed recombination studies on compensation doped InGaAsP as a function of Be density, including x-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS), Hall transport, transmission spectroscopy, and steady-state and timeresolved photoluminescence (PL), from which we show that p type layers present an anomalously high degree of compensation on the order of 1018 cm 3, and incorporation of oxygen is enhanced during Be doping
High degree of compensation on the order of 1018 cm 3 is observed for p type layers, while for NBe below 1×1018 cm 3 samples behave as n type
Summary
Compensation doping in compound semiconductors and the associated carrier transport and recombination dynamics are of great importance for device designs and analyses, especially when p type light doping is of concern. It has been shown that incorporation of O via formation of Be-O complexes could occur in the growth of Be-doped InGaAs, leading to an increased degree of compensation and enhanced impurity scattering.[6,7] In order to uncover the carrier relaxation dynamics in InGaAsP alloys, considerable efforts have been devoted to the optical and lifetime characterizations of bulk and quantum well type structures far.[4,6,8,9,10,11,12,13,14] only very few have addressed p type InGaAsP4,14 where compensation behaviors become of major concern. We report results from structural, carrier transport and detailed recombination studies on compensation doped InGaAsP as a function of Be density, including x-ray diffraction (XRD), secondary ion mass spectroscopy (SIMS), Hall transport, transmission spectroscopy, and steady-state and timeresolved photoluminescence (PL), from which we show that p type layers present an anomalously high degree of compensation on the order of 1018 cm 3, and incorporation of oxygen is enhanced during Be doping
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