Behavioral modeling for stability in multi-chip power modules

Abstract

Since fast switching is an essential part of the value of wide bandgap devices (i.e., silicon carbide and gallium nitride power transistors) it is imperative that the designers of high-power modules using WBG devices have modeling and simulation tools to manage the “near RF” dynamic behavior of the system in order to preclude instability and to manage electromagnetic emission. The behavioral modeling reported in this work is computationally efficient for use in high-power multi-chip-module (MCM) package layout and die integration. Physics-based modeling is used to form a multiport S-parameter behavioral model. Comparison in the frequency domain is made between theoretical and experimental linear S-parameters for an exemplar direct bonded copper (DBC) board. Time domain experimental results are shown as a reference for future time-domain MCM performance evaluations using the S-parameter models.