Behavior of Ultrafine Metallic Particles on Silicon Wafer Surface

Abstract

The diameter of particles which adversely affects the yield has been shrinking as ULSI devices are more and more miniaturized. Ultrafine particles with diameters of 0.1 μm or less have become important recently. Ultrafine particles of this type are expected to be difficult to remove. This study has established a method to evaluate ultrafine particle removal efficiency. Ultrafine metallic particles with diameters of several to several hundreds of nanometers were deposited on the Si surface using a gas deposition method. The removal efficiency of the ultrafine particles using various cleaning solutions was investigated. APM cleaning can remove 150 nm Au particles, but cannot remove ultrafine Au particles with a diameter less than several tens of nanometers. In addition, the Si surface becomes rougher when a cleaning is performed to remove Au ultrafine particles. This is believed to be because noble metals such as Au, Ag, and Cu, which feature a higher electronegativity than Si, attract electrons from Si facilitating Si oxidation.