Abstract
Diamond films were deposited on a Si substrate with a hot filament chemical vapor deposition (HFCVD). Then the residual stresses in the films were measured by the curvature method. The results showed that the residual stress changed from a compressive to a tensile stress with increasing film thickness. Tensile residual stresses were almost saturated, and those showed higher stress values with increased methane flow rate. We deduced a vacancy and grain boundary acted as a potential source of tensile stress. In order to investigate the effects of hydrogen on the residual stress, qualitative and quantitative analyses were carried out with the dynamic secondary ion mass spectrometry (SIMS) and elastic recoiled detection (ERD).
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