Abstract
Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm-1/GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.
Highlights
As a typical III-V narrow band gap semiconductor material, InP has various applications in infrared optoelectric devices
Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature
High quality InPBi alloys were successfully synthesized by gas source molecular beam epitaxy (MBE) method at low temperature
Summary
As a typical III-V narrow band gap semiconductor material, InP has various applications in infrared optoelectric devices. Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature.
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