Behavior of optically injected carriers and photo-induced effects in germanium chalcogenide glasses

Abstract

The temperature dependence of the photoconductivity in GeSe 2 glass show a broad maximum in the high temperature range, as observed so far. However, the activation energy is dependent on the photon energy of the excitation light. This may show that recombination process depends on the excitation photon energy. The photo-induced ESR and the photo-induced optical edge shift in GeS glasses show a similar annealing behavior in a quite parallel way. Moreover, it is manifested experimentally that the local rearrangement of atoms is directly responsible for both of photo-induced ESR and optically-induced optical edge shift.