Abstract
Behavior of nickel adsorption on silicon wafer from SC1 process, based on TMAH, is studied as a function of TMAH concentration, etch rate, residence time in solution. Deposition behavior of nickel on wafer surface is also investigated, from SC1 and dilute hydrochloric acid solution, intentionally contaminated with nickel. Temperature dependence in the behavior of nickel deposition from Ammonia based and TMAH based SC1 solution, is investigated. Finally, characterization of surface-deposited nickel on the wafer surface from the SC1 solution is carried out to provide possible mechanism and nature of deposited nickel.
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