Abstract
Several methods that have been used to inject ions into layers of thermally grown SiO2 are reviewed and compared. We have studied the injection of various ionic species through the free surface of the oxide. A thin layer of a salt containing the desired ion is coated on the surface which is then charged with a corona discharge of the proper polarity. Some positive ions move through the oxide under these conditions while others do not. The determining factor is apparently the ionic radius. The smallest negative ion is F− and this shows some mobility under these conditions, though less than the smaller positive ions.
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