Behavior of hydrogen implanted into Si-implanted SiO 2

Abstract

We applied the elastic recoil detection method to the in situ measurement of the hydrogen behavior in Si-implanted SiO 2 samples, where annealing in hydrogen environment increases photoluminescence efficiency. Dominant hydrogen trap sites changed depending on implantation conditions. In samples annealed at room temperature, hydrogen seems to be trapped forming vacancy–H (V–H) and Si–H bonds. The thermal annealing of the high-dose Si-implanted SiO 2 samples up to a temperature of 1173 K changes defects into tight hydrogen trapping of Si–H bond in conflict with results obtained at a low dose implantation. Annealing at 1343 K grows Si nanocrystals, and hydrogen seems to be trapped at the interface of Si nanocrystal/SiO 2 matrix. However, a result of high-dose implantation of Si up to 6×10 17 cm −2 showed that a large part of hydrogen is trapped as self-induced V–H complexes formed inside the crystals instead of the trap at interface.