Abstract
Gallium nitride (GaN) nanoneedles were synthesized by using the hydride vapor phase epitaxy method at various growth temperatures and times under a HCl:NH3 flow ratio of 1:38. The morphology of GaN nanostructures varied according to the growth temperatures, and nanoneedles were formed at 640°C temperature zone. Further, their heights and diameters increased with increasing growth time whereas the stems of the nanoneedles coalesced. X-ray diffraction patterns showed that the GaN nanoneedles were orientated along the [0001] direction and underwent biaxial compressive stress. Also, the Raman spectra exhibited the smallest compressive strain in the sample grown for 60 min compared to the other samples.
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