Abstract
We studied the behavior of Ga+ secondary ion intensity in relation to oxygen matrix effect in gallium focused ion beam secondary ion mass spectrometry (Ga FIB SIMS). In two types of experiments, namely, ambient oxygen gas introduction and removal of native oxide film, the Ga+ intensity was found to behave in relation to the oxygen matrix effect in the same way as the matrix ion intensity. From the results, we proposed a way to cancel the oxygen matrix effect by using implanted Ga as an internal standard. Furthermore, the accumulation manner of Ga in a sample was examined by changing the Ga+ dose rate and the incident angle of the FIB in order to clarify the experimental conditions under which the use of Ga+ standard is applicable.
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