Abstract
Abstract The behavior of electron emission is investigated for phosphorus-doped homoepitaxial diamond films grown by microwave plasma assisted chemical vapor deposition. Field emission characteristics are measured at various spacings between the anode electrode and diamond surface and at various distances from the cathode metal to the diamond surface just below the anode electrode. A variation in the turn-on voltage occurs with cathode metals. This behavior of the turn-on voltage demonstrates that the electron injection at the diamond/metal contact has an influence on the field emission characteristics. Moreover, a reduction in the turn-on voltage is found for the diamond film with a low electrical resistivity. This is due to a decrease of voltages for the electron injection and for the electron transport in the diamond film.
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