Behavior of Donor Impurity Binding Energy Confined In a GaAs Constant Total Effective Radius Multi-Shells Quantum Dots: Dielectric Mismatch effects

Abstract

In this work, we have studied effects the number of wells, quantum dot thickness and dielectric mismatch on binding energy of a single donor impurity which confined in GaAs constant total effective radius multi-shells quantum dots. For the first time, we have reported an oscillating binding energy when numbers of wells increase which can considerably help to alter the properties of modern quantum devices. Oscillations of 1s and 2s binding energies have 180° phase difference while 1s and 3s binding energies oscillate in phase. When outer quantum dot radius R2 increases the amplitudes of the oscillations decreases while by going from 1s to 3s the amplitudes of the oscillations increases. When increases the impurity binding energy decreases. Finally, we have shown that effect of the dielectric mismatch is larger for systems with smaller outer quantum dot radius R2.