Abstract
Behavior of dislocations due to thermal shock in heavily B-doped Si seeds in Czochralski (CZ) Si crystal growth has been investigated. Dislocations due to thermal shock formed in a seed of 7×7 mm 2 cross-section with a B concentration of 3×10 18 atoms/cm 3 when the seed was simply dipped in Si melt. However, dislocations disappeared when the seed was intentionally melted back in melt after initial dipping. We concluded that some dislocations which were formed in a Si seed just above the crystal–melt interface disappeared when the seed was intentionally melted back at a melting rate exceeding the dislocation propagation velocity, which decreased with increasing B concentration in Si seed.
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