Abstract
Self-consistent electronic structure calculations of δ-doped quantum wells (QW) in the presence of in-plane magnetic fields B up to 20 Tesla are carried out within the frameworks of the effective mass and the local density approximations. QWs composed of two layers of Ga1-xA1xAs, separated by a layer of GaAs with a donor δ-doped sheet in the center, are considered. The width of the GaAs layer was varied from 100 to 400 A. It is shown that the diamagnetic shift increases with the increasing of the GaAs QW width. The magnetic field induces remarkable changes in the energy dispersions of electrons and holes, along an in-plane direction perpendicular to B. The most striking effect occurs in the nature of the band gap of these systems. We found that the valence band displays a double-maximum character instead of a single maximum at the center of the Brillouin zone. © 1996 John Wiley & Sons, Inc.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
