Abstract
To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si substrate by chemical vapor deposition (CVD). No transfer processes are needed. The MoS2 thin film that is deposited on the n-type Si substrate exhibits p-type behavior and the MoS2/Si device exhibits stable rectification behavior. It is found that the thermionic emission–diffusion model is the dominant process in this fabricated MoS2/Si device. The MoS2/Si device also exhibits high sensitivity to solar irradiation. Because of the low reflectance values for the MoS2/Si samples, the enhanced sensitivity is due to high external light injection efficiency. This study provides valuable scientific information for multiple layered MoS2 films for other electronic and optoelectronic applications.
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