Abstract
Abstract Antimony implantation into silicon was carried out at RT with a dose of 4.5 × 1015 cm−2, energy 75 keV. For the annealing of the sample pulses of a Q-switched ruby laser were used with energy density of ∼ 1.5 Joule/cm2 and duration of 15–20 nsec. Hall effect measurement was applied to determine the electrical activity of the layers. Lattice location and the depth profile of Sb was studied by RBS and channeling technique. Measurements show that after laser annealing Sb occupies mostly substitutional sites in Si with 84% electrical activity. It has been shown that after laser annealing the concentration of Sb in lattice sites is almost an order of magnitude higher than the limit of solid solubility. Isochron and isothermal annealing of these samples up to 1150°C was carried out to study the kinetics of reverse annealing of antimony.
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